Tower Semiconductor (NASDAQ/TASE: TSEM), a leading foundry of high-value analog semiconductor solutions, today announced the production of Wi-Fi 7 RF front-end module (FEM) devices based on its advanced 300mm RFSOI technology. Partnering with Broadcom Inc. (NASDAQ: AVGO), Tower has enabled fully integrated Wi-Fi FEM devices on a single RFSOI die. This innovative solution delivers superior performance and efficiency compared to existing non-SOI technologies, setting a new standard in the market for advanced mobile applications.
“The unique advantages of Tower’s RFSOI technology have enabled Broadcom to design and bring to market a set of compact, high-performance FEMs for Wi-Fi 7 mobile applications,” said Vijay Nagarajan, vice president of Marketing, Wireless Communications and Connectivity, Broadcom. “These FEMs – a product of our long-standing partnership with Tower – are tailored to meet the stringent size and power efficiency requirements for mobile Wi-Fi applications.”
“We are thrilled to collaborate with a market leader like Broadcom, extending Tower’s leading RFSOI platform to enable innovative architectural options for integrated front-end module designs, including unique devices for LNAs and power amplifiers, and high gate density standard cells for size reduction in logic area,” said Dr. Marco Racanelli, President, Tower Semiconductor. “Broadcom’s premier capabilities in RF FEM product design complement our technological strengths, allowing both companies to achieve unprecedented performance and integration. This partnership underscores our dedication to aligning roadmaps with our customers and advancing groundbreaking products, reinforcing Tower’s commitment to delivering superior technology and manufacturing solutions, enabling customers’ success.”
This highly integrated process reduces chip area despite the complexity of having to support new features and frequency bands. Tower’s RFSOI technology platform delivers best-in-class silicon-based switch and LNA performance, as evidenced by its widespread adoption. Integrating a PA device into this technology eliminates the additional signal loss of propagating signals between separate dies, while the high-resistivity SOI substrate enhances PA efficiency by supporting passive elements like inductors with a higher quality factor.
